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Thoughts on the Construction of an Electronic Grade Polycrystalline Silicon Plant with Annual Production

Liang Junwu

Strategic Study of CAE 2000, Volume 2, Issue 6,   Pages 33-35

Abstract:

This paper briefly reviews the electronic grade polysilicon production capacity and market demand in the world as well as in China, It is estimated that in the year of 2000 and 2010 the polysilicon demand in China will be 736 t/a and 1 304 t/a, respectively.

In the recent years, the gross polysilicon production in China is only 80 t/a, so the construction of an electronic grade polysilicon plant in China with a 1 000 t/a production capacity should be resonable. However, referring the newest statistical data since 1997, the world polysilicon production capacity has being exceeded the market demand and the trend will continue in the near future. In order to occupy the domestic polysilicon market the future polysilicon plant will face challenge. The quality of the product and the manufacturing cost are the most important criteria to be considered. Ensuring the polysilicon product purity, the manufacturing cost should be near 20 dollars per kilogram for competition in domestic market.

Keywords： polycrystalline silicon     semiconductor     production    

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A thermoelectric generator and water-cooling assisted high conversion efficiency polycrystalline silicon

Zekun LIU, Shuang YUAN, Yi YUAN, Guojian LI, Qiang WANG

Frontiers in Energy 2021, Volume 15, Issue 2,   Pages 358-366 doi: 10.1007/s11708-020-0712-1

Abstract: Solar energy has been increasing its share in the global energy structure. However, the thermal radiation brought by sunlight will attenuate the efficiency of solar cells. To reduce the temperature of the photovoltaic (PV) cell and improve the utilization efficiency of solar energy, a hybrid system composed of the PV cell, a thermoelectric generator (TEG), and a water-cooled plate (WCP) was manufactured. The WCP cannot only cool the PV cell, but also effectively generate additional electric energy with the TEG using the waste heat of the PV cell. The changes in the efficiency and power density of the hybrid system were obtained by real time monitoring. The thermal and electrical tests were performed at different irradiations and the same experiment temperature of 22°C. At a light intensity of 1000 W/m , the steady-state temperature of the PV cell decreases from 86.8°C to 54.1°C, and the overall efficiency increases from 15.6% to 21.1%. At a light intensity of 800 W/m , the steady-state temperature of the PV cell decreases from 70°C to 45.8°C, and the overall efficiency increases from 9.28% to 12.59%. At a light intensity of 400 W/m , the steady-state temperature of the PV cell decreases from 38.5°C to 31.5°C, and the overall efficiency is approximately 3.8%, basically remain unchanged.

Keywords： photovoltaic (PV)     thermoelectric generator     conversion efficiency     hybrid energy systems     water-cooled plate (WCP)    

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The Production Technology of Electronic Grade Polycrystalline Silicon

Liang Junwu

Strategic Study of CAE 2000, Volume 2, Issue 12,   Pages 34-39

Abstract:

The technology of construction of an electronic grade polycrystalline silicon plant with annual production

Keywords： polysilicon     trichlorosilane method     silane method     flow chart     production    

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Single-Seed Casting Large-Size Monocrystalline Silicon for High-Efficiency and Low-Cost Solar Cells Article

Bing Gao,Satoshi Nakano,Hirofumi Harada,Yoshiji Miyamura,Takashi Sekiguchi,Koichi Kakimoto

Engineering 2015, Volume 1, Issue 3,   Pages 378-383 doi: 10.15302/J-ENG-2015032

Abstract:

To grow high-quality and large-size monocrystal-line silicon at low cost, we proposed a single-seedTo realize this technique, two challenges—polycrystalline nucleation on the crucible wall and dislocationand operating conditions from numerical analysis, experiments were performed to grow monocrystalline silicon

Keywords： single-seed casting     monocrystalline silicon     polycrystalline nucleation     dislocation multiplication     multicrystallinesilicon    

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Sub-nanometer finishing of polycrystalline tin by inductively coupled plasma-assisted cutting

Frontiers of Mechanical Engineering 2023, Volume 18, Issue 3, doi: 10.1007/s11465-023-0751-5

Abstract: Polycrystalline tin is an ideal excitation material for extreme ultraviolet light sources.However, the existence of grain boundary (GB) limits the surface roughness of polycrystalline tin afterinductively coupled plasma (ICP)-assisted cutting was developed for the sub-nanometer finishing of polycrystallineThe effects of large-thermal-gradient ICP treatment on the microstructure of polycrystalline tin wereICP processing for 3.0 s, corresponding to the temperature gradient of 0.30 K/µm, the grain size of polycrystalline

Keywords： plasma-assisted cutting     polycrystalline tin     single-point diamond turning     surface roughness    

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Characterization of random stress fields obtained from polycrystalline aggregate calculations using multi-scale

Bruno SUDRET,Hung Xuan DANG,Marc BERVEILLER,Asmahana ZEGHADI,Thierry YALAMAS

Frontiers of Structural and Civil Engineering 2015, Volume 9, Issue 2,   Pages 121-140 doi: 10.1007/s11709-015-0290-1

Abstract: The spatial variability of stress fields resulting from polycrystalline aggregate calculations involvingBased on a set of finite element polycrystalline aggregate calculations the properties of the maximal

Keywords： polycrystalline aggregates     crystal plasticity     random fields     spatial variability     correlation structure    

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Effects of nano-silicon and common silicon on lead uptake and translocation in two rice cultivars

Jianguo LIU,Hui CAI,Congcong MEI,Mingxin WANG

Frontiers of Environmental Science & Engineering 2015, Volume 9, Issue 5,   Pages 905-911 doi: 10.1007/s11783-015-0786-x

Abstract: The current study investigated the effects of nano-silicon (Si) and common Si on lead (Pb) toxicity,

Keywords： silicon (Si)     lead (Pb)     rice (Oryza sativa L.)     toxicity     accumulation    

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Computer modeling of crystal growth of silicon for solar cells

Lijun LIU, Xin LIU, Zaoyang LI, Koichi KAKIMOTO

Frontiers in Energy 2011, Volume 5, Issue 3,   Pages 305-312 doi: 10.1007/s11708-011-0155-9

Abstract: A computer simulator with a global model of heat transfer during crystal growth of Si for solar cells is developed. The convective, conductive, and radiative heat transfers in the furnace are solved together in a coupled manner using the finite volume method. A three-dimensional (3D) global heat transfer model with 3D features is especially made suitable for any crystal growth, while the requirement for computer resources is kept permissible for engineering applications. A structured/unstructured combined mesh scheme is proposed to improve the efficiency and accuracy of the simulation. A dynamic model for the melt-crystal (mc) interface is developed to predict the phase interface behavior in a crystal growth process. Dynamic models for impurities and precipitates are also incorporated into the simulator. Applications of the computer simulator to Czochralski (CZ) growth processes and directional solidification processes of Si crystals for solar cells are introduced. Some typical results, including the turbulent melt flow in a large-scale crucible of a CZ-Si process, the dynamic behaviors of the mc interface, and the transport and distributions of impurities and precipitates, such as oxygen, carbon, and SiC particles, are presented and discussed. The findings show the importance of computer modeling as an effective tool in the analysis and improvement of crystal growth processes and furnace designs for solar Si material.

Keywords： computer modeling     silicon     crystal growth     solar cells    

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Atomistic understanding of interfacial processing mechanism of silicon in water environment: A ReaxFF

Frontiers of Mechanical Engineering 2021, Volume 16, Issue 3,   Pages 570-579 doi: 10.1007/s11465-021-0642-6

Abstract: The interfacial wear between silicon and amorphous silica in water environment is critical in numerousHerein, reactive force field simulations are utilized to study the interfacial process between silicon

Keywords： silicon     ReaxFF     molecular dynamics     friction     damage    

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Effect of extrusion temperature on the physical properties of high-silicon aluminum alloy

YANG Fuliang, GAN Weiping, CHEN Zhaoke

Frontiers of Mechanical Engineering 2007, Volume 2, Issue 1,   Pages 120-124 doi: 10.1007/s11465-007-0021-y

Abstract: Light-weight high-silicon aluminum alloys are used for electronic packaging in the aviation and space-flightExperimental results show that the density of high-silicon aluminum alloys prepared with this method

Keywords： coefficient     hermeticity     temperature     relationship     air-atomization    

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Behavior of Impurities, Defects and Surface Morphology for Silicon and Silicon Based Semiconducting Materials

Tu Hailing

Strategic Study of CAE 2000, Volume 2, Issue 1,   Pages 7-17

Abstract: Since silicon based materials as the alternative material systems have received strong growing interest, the manufacturing technologies and applications of SiGe, silicon-on-insulator (SOI) have been introducedFinally, the author outlooks the future scientific and engineering challenges and opportunities for siliconand silicon based materials envisioned for the sub quarter-micro and nanometer integrated circuits as

Keywords： silicon wafers     epitaxial silicon wafers     SiGe     silicon-on-insulator (SOI)     impurities behavior     defects control    

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Laser enhanced gettering of silicon substrates

Daniel CHEN,Matthew EDWARDS,Stuart WENHAM,Malcolm ABBOTT,Brett HALLAM

Frontiers in Energy 2017, Volume 11, Issue 1,   Pages 23-31 doi: 10.1007/s11708-016-0441-7

Abstract: One challenge to the use of lightly-doped, high efficiency emitters on multicrystalline silicon wafers, a novel laser based method for gettering is investigated for its impact on commercially available silicon

Keywords： gettering     multicystaline     silicon     impurities     laser doping    

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Special issue: Technologies for future high-efficiency industrial silicon wafer solar cells

Frontiers in Energy 2017, Volume 11, Issue 1,   Pages 1-3 doi: 10.1007/s11708-016-0436-4

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Erratum to: Enhancing the photoelectrochemical performance of p-silicon through TiO coating decorated

Frontiers in Energy 2022, Volume 16, Issue 5,   Pages 876-877 doi: 10.1007/s11708-022-0832-x

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Effects of taping on grinding quality of silicon wafers in backgrinding

Zhigang DONG, Qian ZHANG, Haijun LIU, Renke KANG, Shang GAO

Frontiers of Mechanical Engineering 2021, Volume 16, Issue 3,   Pages 559-569 doi: 10.1007/s11465-020-0624-0

Abstract: Taping is often used to protect patterned wafers and reduce fragmentation during backgrinding of siliconGrinding experiments using coarse and fine resin-bond diamond grinding wheels were performed on siliconHowever, the PV value, surface roughness, and subsurface damage of silicon wafers with taping deterioratedThe PV value of silicon wafers with taping decreased with increasing mesh size of the grinding wheelThe surface roughness and subsurface damage of silicon wafers with taping decreased with increasing mesh

Keywords： taping     silicon wafer     backgrinding     subsurface damage     surface roughness    

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Title Author Date Type Operation

Thoughts on the Construction of an Electronic Grade Polycrystalline Silicon Plant with Annual Production

Liang Junwu

Journal Article

A thermoelectric generator and water-cooling assisted high conversion efficiency polycrystalline silicon

Zekun LIU, Shuang YUAN, Yi YUAN, Guojian LI, Qiang WANG

Journal Article

The Production Technology of Electronic Grade Polycrystalline Silicon

Liang Junwu

Journal Article

Single-Seed Casting Large-Size Monocrystalline Silicon for High-Efficiency and Low-Cost Solar Cells

Bing Gao,Satoshi Nakano,Hirofumi Harada,Yoshiji Miyamura,Takashi Sekiguchi,Koichi Kakimoto

Journal Article

Sub-nanometer finishing of polycrystalline tin by inductively coupled plasma-assisted cutting

Journal Article

Characterization of random stress fields obtained from polycrystalline aggregate calculations using multi-scale

Bruno SUDRET,Hung Xuan DANG,Marc BERVEILLER,Asmahana ZEGHADI,Thierry YALAMAS

Journal Article

Effects of nano-silicon and common silicon on lead uptake and translocation in two rice cultivars

Jianguo LIU,Hui CAI,Congcong MEI,Mingxin WANG

Journal Article

Computer modeling of crystal growth of silicon for solar cells

Lijun LIU, Xin LIU, Zaoyang LI, Koichi KAKIMOTO

Journal Article

Atomistic understanding of interfacial processing mechanism of silicon in water environment: A ReaxFF

Journal Article

Effect of extrusion temperature on the physical properties of high-silicon aluminum alloy

YANG Fuliang, GAN Weiping, CHEN Zhaoke

Journal Article

Behavior of Impurities, Defects and Surface Morphology for Silicon and Silicon Based Semiconducting Materials

Tu Hailing

Journal Article

Laser enhanced gettering of silicon substrates

Daniel CHEN,Matthew EDWARDS,Stuart WENHAM,Malcolm ABBOTT,Brett HALLAM

Journal Article

Special issue: Technologies for future high-efficiency industrial silicon wafer solar cells

Journal Article

Erratum to: Enhancing the photoelectrochemical performance of p-silicon through TiO coating decorated

Journal Article

Effects of taping on grinding quality of silicon wafers in backgrinding

Zhigang DONG, Qian ZHANG, Haijun LIU, Renke KANG, Shang GAO

Journal Article